Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2020
- Source ID
- 10.1016/j.microrel.2019.113554
Entities
People
- A. Privat
- Arshey Patadia
- H.j. Barnaby
- K. Holbert
- K. Muthuseenu
Organizations
- National Science Foundation