1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2023
- Source ID
- 10.1016/j.prime.2023.100330
Entities
People
- Andy Xie
- Jingshan Wang
- Patrick Fay
- Yu Duan
- Zhongtao Zhu
Organizations
- ARPA-E
- Army Research Office