Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2015
- Source ID
- 10.1016/j.sse.2014.12.025
Entities
People
- B.p. Downey
- D. S. Katzer
- D.j. Meyer
- M. Pan
- T.m. Marron
- Xiangyu Gao
Organizations
- Office of Naval Research