All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 01, 2020
Source ID
10.1016/j.sse.2019.107696

Entities

People

  • Asif Khan
  • Choonghee Lee
  • Gabriel Calderon Ortiz
  • Hao Xue
  • Jinwoo Hwang
  • Seongmo Hwang
  • Shahadat H. Sohel
  • Siddharth Rajan
  • Towhidur Razzak
  • Wu Lu
  • Zhanbo Xia

Organizations

  • Army Research Office
  • Defense Advanced Research Projects Agency