An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2022
Source ID
10.1016/j.sse.2021.108193

Entities

People

  • Hugh Barnaby
  • Ian P. Livingston
  • Ivan S. Esqueda

Organizations

  • Defense Advanced Research Projects Agency
  • Defense Threat Reduction Agency