Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process

Document Details

Document Type: Pub Defense Publication
Publication Date: Jun 01, 2016
Source ID: 10.1016/j.tsf.2016.04.019

Entities

People

J. Syzdek
K.m. Yu
M. Beres
S.s. Mao

Organizations

Office of Basic Energy Sciences
Office of Science
United States Department of Defense
United States Department of Energy

Tags

Technology Areas

Directed Energy
Directed Energy - Pulsed-Laser Deposition
Microelectronics
Microelectronics - Graphene