Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2018
- Source ID
- 10.1016/j.tsf.2018.03.071
Entities
People
- B. Claflin
- Buguo Wang
- D. C. Look
- John Kouvetakis
- Yung Kee Yeo
- Z.-q. Fang
Organizations
- Air Force Office of Scientific Research