First Principles Design of High Hole Mobility p-Type Sn–O–X Ternary Oxides: Valence Orbital Engineering of Sn2+ in Sn2+–O–X by Selection of Appropriate Elements X
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 18, 2020
- Source ID
- 10.1021/acs.chemmater.0c03495
Entities
People
- Darrell G. Schlom
- Kyeongjae Cho
- Suman Datta
- Xiaolong Yao
- Yaoqiao Hu
Organizations
- Cornell University
- Defense Advanced Research Projects Agency
- Leibniz Institute for Crystal Growth
- University of Notre Dame
- University of Texas at Dallas