High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

Document Details

Document Type
Pub Defense Publication
Publication Date
May 22, 2018
Source ID
10.1021/acs.chemrev.8b00045

Entities

People

  • Antonio Facchetti
  • Binghao Wang
  • Lifeng Chi
  • Mohammed Al-Hashimi
  • Tobin J. Marks
  • Wei Huang

Organizations

  • China Scholarship Council
  • National Science Foundation
  • Northwestern University
  • Qatar Foundation
  • Qatar National Research Fund
  • Texas A&M University
  • United States Department of Defense

Tags

Technology Areas

  • Microelectronics