Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 17, 2015
Source ID
10.1021/acs.nanolett.5b00104

Entities

People

  • Agnès Barthélémy
  • Alexandre Gloter
  • Charles S. Fadley
  • Christian Colliex
  • Cécile Carrétéro
  • Gunnar K. Palsson
  • Hiroyuki Yamada
  • Jean-pascal Rueff
  • Julien E Rault
  • Katia March
  • Manuel Bibes
  • Maya Marinova
  • Odile Stéphan
  • S. Fusil
  • Slavomir Nemsak
  • Vincent Garcia

Organizations

  • Agence Nationale de la Recherche
  • Army Research Office
  • European Research Council
  • Institut Laue–Langevin
  • Laboratory of Solid State Physics
  • Lawrence Berkeley National Laboratory
  • National Institute of Advanced Industrial Science and Technology
  • Seventh Framework Programme
  • Thales Group
  • University of California, Davis
  • Uppsala University

Tags

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene