Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

Document Details

Document Type
Pub Defense Publication
Publication Date
May 09, 2016
Source ID
10.1021/acs.nanolett.6b01186

Entities

People

  • A. Fortunelli
  • A. Ishii
  • C. Ohata
  • G. Fiori
  • G. Iannaccone
  • J. Haruyama
  • M. Hasegawa
  • S. Katsumoto
  • S. Roche
  • T. Cusati
  • T. Nakamura
  • Y. Katagiri

Organizations

  • Air Force Office of Scientific Research
  • Catalan Institution for Research and Advanced Studies
  • Ministry of Economy, Industry and Competitiveness
  • Ministry of Education, Culture, Sports, Science and Technology
  • Seventh Framework Programme
  • Spanish National Research Council
  • University of Pisa
  • University of Tokyo

Tags

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene