MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 10, 2016
Source ID
10.1021/acs.nanolett.6b03999

Entities

People

  • Ahmad Zubair
  • Amir Tavakkoli K. G.
  • Amirhasan Nourbakhsh
  • Dimitri A Antoniadis
  • Efthimios Kaxiras
  • Jing Kong
  • Karl K Berggren
  • Mildred S. Dresselhaus
  • Redwan N. Sajjad
  • Shiang Fang
  • Tomás Palacios
  • Wei Chen
  • Xi Ling

Organizations

  • Air Force Office of Scientific Research
  • Army Research Office
  • Division of Advanced Cyberinfrastructure
  • Division of Materials Research
  • Harvard University
  • Office of Naval Research