Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 08, 2023
Source ID
10.1021/acsaelm.3c00079

Entities

People

  • Bhaswar Chakrabarti
  • Eric M Vogel
  • Erik C Anderson
  • Fabia Farlin Athena
  • Matthew P. West
  • Pradip Basnet

Organizations

  • Air Force Office of Scientific Research
  • Georgia Tech
  • Indian Institute of Technology Madras