Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 17, 2020
Source ID
10.1021/acsami.0c09541

Entities

People

  • Connor S Bailey
  • Divya Somvanshi
  • Eilam Yalon
  • Emanuel Ber
  • Eric Pop

Organizations

  • Department of Science and Technology
  • Stanford University
  • Technion – Israel Institute of Technology
  • United States Department of Defense