Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 07, 2021
- Source ID
- 10.1021/acsami.1c01241
Entities
People
- Anwar Siddique
- Edwin L. Piner
- Jonathan Anderson
- M. Holtz
- Raju Ahmed
Organizations
- Army Research Office
- Division of Electrical, Communications & Cyber Systems
- Texas State University