Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 02, 2015
Source ID
10.1021/acsami.5b01600

Entities

People

  • Dennis Nordlund
  • Dmitry M. Zhernokletov
  • Muhammad A. Negara
  • Paul C. Mcintyre
  • Rathnait D. Long
  • Shaul Aloni

Organizations

  • Lawrence Berkeley National Laboratory
  • Office of Basic Energy Sciences
  • Office of Naval Research
  • Semiconductor Research Corporation
  • Stanford Synchrotron Radiation Lightsource
  • Stanford University