Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices

Document Details

Document Type: Pub Defense Publication
Publication Date: Aug 08, 2016
Source ID: 10.1021/acsami.6b03862

Entities

People

M. A. Negara
M. Kitano
P. C. Mcintyre
R. D. Long

Organizations

Office of Naval Research
Semiconductor Research Corporation
Stanford University