Thermal Atomic Layer Etching of SiO2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 13, 2017
- Source ID
- 10.1021/acsami.7b01259
Entities
People
- Amy E. Marquardt
- Austin M. Cano
- Jaime W. Dumont
- Steven M. George
Organizations
- Defense Advanced Research Projects Agency
- Division of Chemistry
- University of Colorado Boulder