Formation of the Conducting Filament in TaOx-Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 18, 2018
Source ID
10.1021/acsami.8b03726

Entities

People

  • Andrew A. Herzing
  • Brian T Sneed
  • Dasheng Li
  • David A Cullen
  • James A. Bain
  • Karren L. More
  • Marek Skowronski
  • N. T. Nuhfer
  • Yuanzhi Ma

Organizations

  • Defense Advanced Research Projects Agency
  • Division of Materials Research
  • National Institute of Standards and Technology
  • Oak Ridge National Laboratory