Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 10, 2018
- Source ID
- 10.1021/acsami.8b07030
Entities
People
- Janghyuk Kim
- Jihyun Kim
- Marko J. Tadjer
- Michael A. Mastro
Organizations
- Korea Institute of Energy Technology Evaluation and Planning
- National Research Foundation of Korea
- Office of Naval Research
- United States Naval Research Laboratory