Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 29, 2019
- Source ID
- 10.1021/acsnano.9b06846
Entities
People
- Arindam Ghosh
- Milinda Wasala
- Prasanna D Patil
- Pulickel Ajayan
- Robert Vajtai
- Saikat Talapatra
- Sidong Lei
- Sujoy Ghosh
Organizations
- Army Research Office
- Georgia State University
- Indian Institute of Science, Bengaluru
- Indo-US Science and Technology Forum
- Rice University
- Southern Illinois University