β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 25, 2017
- Source ID
- 10.1021/acsomega.7b01289
Entities
People
- Hong Zhou
- Lingming Yang
- Mengwei Si
- Peide Ye
Organizations
- Air Force Office of Scientific Research
- Defense Threat Reduction Agency
- Purdue University