Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 07, 2014
Source ID
10.1021/nn503369y

Entities

People

  • D. Viehland
  • Haosu Luo
  • Jiefang Li
  • Yanxi Li
  • Yaojin Wang
  • Yue Zhang
  • Zhiguang Wang

Organizations

  • Air Force Office of Scientific Research
  • Shanghai Institute of Ceramics
  • Virginia Tech