Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Abstract
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 14, 2022
- Source ID
- 10.1038/s41377-022-00982-7
Entities
People
- Andrew Clark
- Chen Shang
- David Harame
- Eamonn T Hughes
- Gerald Leake
- John E. Bowers
- Joshua Herman
- Kaiyin Feng
- Mukul Debnath
- Peter Ludewig
- Rosalyn Koscica
- Yating Wan
Organizations
- Air Force Research Laboratory Information Directorate
- United States Department of Defense