Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies

Abstract

Vanadium dioxide (VO2) is a material that undergoes an insulator–metal transition upon heating above 340 K. It remains debated as to whether this electronic transition is driven by a corresponding structural transition or by strong electron–electron correlations. Here, we use apertureless scattering near-field optical microscopy to compare nanoscale images of the transition in VO2 thin films acquired at both mid-infrared and terahertz frequencies, using a home-built terahertz near-field microscope. We observe a much more gradual transition when THz frequencies are utilized as a probe, in contrast to the assumptions of a classical first-order phase transition. We discuss these results in light of dynamical mean-field theory calculations of the dimer Hubbard model recently applied to VO2, which account for a continuous temperature dependence of the optical response of the VO2 in the insulating state.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 06, 2018
Source ID
10.1038/s41467-018-05998-5

Entities

People

  • A. S. McLeod
  • A. Sternbach
  • Amy Mueller
  • D. N. Basov
  • H. T. Kim
  • H. T. Stinson
  • Loic Anderegg
  • M. Rozenberg
  • O. Najera
  • R. Jing
  • Tetiana Slusar

Organizations

  • Agence Nationale de la Recherche
  • Army Research Office
  • Gordon and Betty Moore Foundation
  • Office of Naval Research

Tags

Fields of Study

  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene