Dirac plasmon-assisted asymmetric hot carrier generation for room-temperature infrared detection

Abstract

Due to the low photon energy, detection of infrared photons is challenging at room temperature. Thermoelectric effect offers an alternative mechanism bypassing material bandgap restriction. In this article, we demonstrate an asymmetric plasmon-induced hot-carrier Seebeck photodetection scheme at room temperature that exhibits a remarkable responsivity of 2900 VW−1, detectivity of 1.1 × 109 Jones along with a fast response of ~100 ns in the technologically relevant 8–12 µm band. This is achieved by engineering the asymmetric electronic environment of the generated hot carriers on chemical vapor deposition grown large area nanopatterned monolayer graphene, which leads to a temperature gradient of 4.7 K across the device terminals for an incident power of 155 nW, thereby enhancing the photo-thermoelectric voltage by manifold compared to previous reports. The results presented outline a strategy for uncooled, tunable, and multispectral infrared detection.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 02, 2019
Source ID
10.1038/s41467-019-11458-5

Entities

People

  • Alireza Safaei
  • Debashis Chanda
  • Michael N. Leuenberger
  • Muhammad Waqas Shabbir
  • Sayan Chandra

Organizations

  • United States Department of Defense

Tags

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene