Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor
Abstract
As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 22, 2019
- Source ID
- 10.1038/s41467-019-13271-6
Entities
People
- Cristian Batista
- D Meyers
- Daniel Haskel
- Gilberto Fabbris
- Jian Liu
- Jiun-Haw Chu
- Jong-woo Kim
- Joshua J. Sanchez
- Junyi Yang
- Kipton Barros
- Lin Hao
- M. P. M. Dean
- Philip J. Ryan
- Yongseong Choi
- Zhentao Wang
Organizations
- United States Department of Defense