Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators
Abstract
Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 106. Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 12, 2020
- Source ID
- 10.1038/s41467-020-15005-5
Entities
People
- Andreas Boes
- Boqiang Shen
- Chao Xiang
- Grégory Moille
- Haowen Shu
- John E. Bowers
- Jon D. Peters
- Kartik Srinivasan
- Kerry Vahala
- Lin Chang
- Qi-Fan Yang
- Scott B. Papp
- Songtao Liu
- Su-Peng Yu
- Warren Jin
- Weiqiang Xie
- Xingjun Wang
Organizations
- United States Department of Defense