Benchmarking monolayer MoS2 and WS2 field-effect transistors
Abstract
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm2 chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm2 V−1 s−1 in WS2 FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 29, 2021
- Source ID
- 10.1038/s41467-020-20732-w
Entities
People
- Amritanand Sebastian
- Joan Redwing
- Rahul Pendurthi
- Saptarshi Das
- Tanushree H. Choudhury
Organizations
- Army Research Office
- National Science Foundation