In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
Abstract
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3$${({{{{{\boldsymbol{110}}}}}})}_{{{{{{\bf{O}}}}}}}$$ ( 110 ) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 22, 2021
- Source ID
- 10.1038/s41467-021-26660-7
Entities
People
- Alexei Gruverman
- Bo Wang
- Chang-Beom Eom
- Evgeny Y Tsymbal
- H. X. Huyan
- Haidong Lu
- Hanwool Lee
- J. A. Zorn
- J. W. Lee
- Kitae Eom
- Long-Qing Chen
- S. Lei
- S. Lindemann
- Sangwoo Ryu
- T. H. Kim
- Thomas Tybell
- Tula R Paudel
- Venkatraman Gopalan
- W. P. Gao
- Xiaoqing Pan
- Yakun Yuan
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- Gordon and Betty Moore Foundation
- United States Department of Defense