Excited-state spin-resonance spectroscopy of V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ defect centers in hexagonal boron nitride
Abstract
The recently discovered spin-active boron vacancy (V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 09, 2022
- Source ID
- 10.1038/s41467-022-30772-z
Entities
People
- Arunabh Mukherjee
- Brendan A McCullian
- Gregory D Fuchs
- Jialun Luo
- Nick Vamivakas
- Nikhil Mathur
- Tongcang Li
- Xingyu Gao
Organizations
- Air Force Office of Scientific Research
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- National Science Foundation Directorate for Mathematical & Physical Sciences
- United States Department of Defense