Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
Abstract
Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 10, 2022
- Source ID
- 10.1038/s41467-022-33560-x
Entities
People
- Dmitry Smirnov
- G. Kipshidze
- M. M. Ermolaev
- Mykhaylo Ozerov
- Seongphill Moon
- Sergey Suchalkin
- Yuxuan Jiang
- Zhigang Jiang
Organizations
- Army Research Office
- Division of Materials Research
- National Science Foundation Directorate for Mathematical & Physical Sciences
- Office of Basic Energy Sciences