Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths
Abstract
Solid state quantum defects are promising candidates for scalable quantum information systems which can be seamlessly integrated with the conventional semiconductor electronic devices within the 3D monolithically integrated hybrid classical-quantum devices. Diamond nitrogen-vacancy (NV) center defects are the representative examples, but the controlled positioning of an NV center within bulk diamond is an outstanding challenge. Furthermore, quantum defect properties may not be easily tuned for bulk crystalline quantum defects. In comparison, 2D semiconductors, such as transition metal dichalcogenides (TMDs), are promising solid platform to host a quantum defect with tunable properties and a possibility of position control. Here, we computationally discover a promising defect family for spin qubit realization in 2D TMDs. The defects consist of transition metal atoms substituted at chalcogen sites with desirable spin-triplet ground state, zero-field splitting in the tens of GHz, and strong zero-phonon coupling to optical transitions in the highly desirable telecom band.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 06, 2022
- Source ID
- 10.1038/s41467-022-35048-0
Entities
People
- Dongwook Kim
- Kai-Mei Fu
- Kejun Li
- Kyeongjae Cho
- Xiuyao Lang
- Yaoqiao Hu
- Yeonghun Lee
- Yuan Ping
Organizations
- Army Research Office
- National Research Foundation of Korea