A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform
Abstract
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-standard etching techniques and partially etched waveguides, that lack the reproducibility achieved in silicon photonics. Widespread application of thin-film LiNbO3 requires a reliable solution with precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform employing wafer-scale bonding of thin-film LiNbO3 to silicon nitride (Si3N4) photonic integrated circuits. The platform maintains the low propagation loss (0.1 dB/cm) and efficient fiber-to-chip coupling (3N4 waveguides and provides a link between passive Si3N4 circuits and electro-optic components with adiabatic mode converters experiencing insertion losses below 0.1 dB. Using this approach we demonstrate several key applications, thus providing a scalable, foundry-ready solution to complex LiNbO3 integrated photonic circuits.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 13, 2023
- Source ID
- 10.1038/s41467-023-39047-7
Entities
People
- Anat Siddharth
- Annina Riedhauser
- Charles Möhl
- Daniele Caimi
- Johann Riemensberger
- Junqiu Liu
- Mikhail Churaev
- Miles Anderson
- Paul Seidler
- Rui Ning Wang
- Simon Hönl
- Terence Blésin
- Tobias Kippenberg
- Ute Drechsler
- Viacheslav Snigirev
- Youri Popoff
Organizations
- United States Department of Defense