Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
Abstract
Visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor based on type–II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room–temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front–side illumination, without any anti–reflection coating where the visible cut−on wavelength of the devices is −4 A/cm2 under −20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 1010 cm·Hz1/2/W. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10−10 A/cm2 and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 1013 cm·Hz1/2/W.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 21, 2019
- Source ID
- 10.1038/s41598-019-41494-6
Entities
People
- Abbas Haddadi
- Arash Dehzangi
- Donghai Wu
- Manijeh Razeghi
- Romain Chevallier
- Ryan Mcclintock
Organizations
- Goddard Space Flight Center
- United States Department of Defense