Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
Abstract
A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 27, 2020
- Source ID
- 10.1038/s41598-020-58592-5
Entities
People
- Ali Javey
- Bhagwati Prasad
- Chenze Liu
- Gerd Duscher
- Humaira Taz
- Lane W Martin
- Mark Hettick
- Ramamoorthy Ramesh
- Ramki Kalyanaraman
- Ruijuan Xu
- Rupam Mukherjee
- Shang-Lin Hsu
- Sudipta Seal
- Tamil Selvan Sakthivel
- Vishal Thakare
- Yen-lin Huang
- Zuhuang Chen