Strain-induced quantum Hall phenomena of excitons in graphene

Abstract

We study direct and indirect pseudomagnetoexcitons, formed by an electron and a hole in the layers of gapped graphene under strain-induced gauge pseudomagnetic field. Since the strain-induced pseudomagnetic field acts on electrons and holes the same way, it occurs that the properties of single pseudomagnetoexcitons, their collective effects and phase diagram are cardinally different from those of magnetoexcitons in a real magnetic field. We have derived wave functions and energy spectrum of direct in a monolayer and indirect pseudomagnetoexcitons in a double layer of gapped graphene. The quantum Hall effect for direct and indirect excitons was predicted in the monolayers and double layers of gapped graphene under strain-induced gauge pseudomagnetic field, correspondingly.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 22, 2022
Source ID
10.1038/s41598-022-06486-z

Entities

People

  • Klaus G. Ziegler
  • Oleg L. Berman
  • Roman Ya. Kezerashvili
  • Yurii E. Lozovik

Organizations

  • Army Research Office
  • Julian Schwinger Foundation for Physics Research
  • Russian Center for Science Information

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing