Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers
Abstract
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m2 was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3 $$\times \;10^{5}$$ × 10 5 A/cm2.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2023
- Source ID
- 10.1038/s41598-023-29752-0
Entities
People
- Ali Habiboglu
- Arthur Enriquez
- Bowei Zhou
- Daniel B Gopman
- Deyuan Lyu
- Jian-Ping Wang
- Kennedy Warrilow
- Onri J. Benally
- Pravin Khanal
- Wei-gang Wang
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- Semiconductor Research Corporation