Exfoliation procedure-dependent optical properties of solution deposited MoS2 films

Abstract

The development of high-precision large-area optical coatings and devices comprising low-dimensional materials hinges on scalable solution-based manufacturability with control over exfoliation procedure-dependent effects. As such, it is critical to understand the influence of technique-induced transition metal dichalcogenide (TMDC) optical properties that impact the design, performance, and integration of advanced optical coatings and devices. Here, we examine the optical properties of semiconducting MoS2 films from the exfoliation formulations of four prominent approaches: solvent-mediated exfoliation, chemical exfoliation with phase reconversion, redox exfoliation, and native redox exfoliation. The resulting MoS2 films exhibit distinct refractive indices (n), extinction coefficients (k), dielectric functions (ε1 and ε2), and absorption coefficients (α). For example, a large index contrast of Δn ≈ 2.3 is observed. These exfoliation procedures and related chemistries produce different exfoliated flake dimensions, chemical impurities, carrier doping, and lattice strain that influence the resulting optical properties. First-principles calculations further confirm the impact of lattice defects and doping characteristics on MoS2 optical properties. Overall, incomplete phase reconfiguration (from 1T to mixed crystalline 2H and amorphous phases), lattice vacancies, intraflake strain, and Mo oxidation largely contribute to the observed differences in the reported MoS2 optical properties. These findings highlight the need for controlled technique-induced effects as well as the opportunity for continued development of, and improvement to, liquid phase exfoliation methodologies. Such chemical and processing-induced effects present compelling routes to engineer exfoliated TMDC optical properties toward the development of next-generation high-performance mirrors, narrow bandpass filters, and wavelength-tailored absorbers.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 24, 2023
Source ID
10.1038/s41699-023-00376-2

Entities

People

  • Ali Jawaid
  • Benjamin S. Conner
  • Drake Austin
  • Jie Jiang
  • Jonathan P. Vernon
  • Joshua A. Robinson
  • K. Mahalingam
  • Lirong Sun
  • Michael A Susner
  • Michael A. Velez
  • Nicholas R Glavin
  • Paige Look
  • Peter R. Stevenson
  • Rahul Rao
  • Riccardo Torsi
  • Richard A. Vaia
  • Robert Busch
  • Ruth Pachter
  • Shannon T. Becks
  • W. Joshua Kennedy

Organizations

  • Air Force Research Laboratory Information Directorate
  • National Institute of Standards and Technology

Tags

Readers

  • Nanocomposite Materials Science
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.