Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3
Abstract
The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1−xSnO3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm−3 to 2.0 × 1020 cm−3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V−1 s−1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V−1 s−1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 11, 2021
- Source ID
- 10.1038/s42005-021-00742-w
Entities
People
- Anil Kumar Rajapitamahuni
- Bharat Jalan
- Fengdeng Liu
- I-te Lu
- Jin-Jian Zhou
- Marco Bernardi
- Thomas E. Mates
- Tristan K. Truttmann
Organizations
- Air Force Office of Scientific Research
- National Science Foundation