P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids
Abstract
A new mechanism is identified for doping semiconductors, based on modifications accomplished by impurity atoms deep in the valence band.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2015
- Source ID
- 10.1039/c5ee01309g
Entities
People
- Bartlomiej Wiendlocha
- Hyungyu Jin
- Joseph P. Heremans
Organizations
- Air Force Office of Scientific Research
- National Science Centre Poland
- Ohio State University
- United States Army