Substitution of silicon within the rhombohedral boron carbide (B4C) crystal lattice through high-energy ball-milling
Abstract
Substitution of silicon within the rhombohedral boron carbide (B4C) crystal lattice at moderate temperatures (∼200–400 °C) achieved through high-energy ball-milling.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2015
- Source ID
- 10.1039/c5tc02956b
Entities
People
- Evan R. Glaser
- Joel B. Miller
- Kenan P. Fears
- Manoj K. Kolel-veetil
- Noam Bernstein
- Ramasis Goswami
- Raymond M. Gamache
- S. B. Qadri
- Teddy M. Keller
Organizations
- Defense Advanced Research Projects Agency
- United States Army
- United States Naval Research Laboratory
- Washington University in St. Louis