Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

Abstract

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2016
Source ID
10.1039/c6cc04052g

Entities

People

  • Hanmei Jiang
  • Jingzheng Ren
  • Lichun Dong
  • Limei Zhang
  • Luyi Sun
  • Mingtao Zheng
  • Shaobo Li
  • Zhaofeng Wang

Organizations

  • Air Force Office of Scientific Research
  • Chongqing University
  • Institute of Materials Science
  • National Natural Science Foundation of China
  • National Science Foundation
  • United States Army
  • University of Connecticut
  • University of Minnesota College of Science and Engineering
  • University of Southern Denmark

Tags

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene