High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

Abstract

First-principles electronic structure calculations predict that SrGeO3 and BaSnO3 can be substrate materials for achieving a high-mobility two-dimensional electron gas in perovskite oxide heterostructures.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2016
Source ID
10.1039/c6cp05572a

Entities

People

  • Jianli Cheng
  • Kesong Yang
  • Safdar Nazir
  • Wu Tang
  • Yaqin Wang

Organizations

  • National Science Foundation
  • Office of Naval Research
  • United States Army
  • University of California
  • University of Electronic Science and Technology of China

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene