Thermal stability and electrical conductivity of carbon-enriched silicon oxycarbide
Abstract
Carbon-rich SiOC can effectively delay phase separation and crystallization during pyrolysis. In air, the SiOC materials are stable up to 1000 °C with −1 in air and as high as 4.64 S cm−1 in Ar. This semi-conducting behavior and the thermal stability present promising application potentials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2016
- Source ID
- 10.1039/c6tc00069j
Entities
People
- Donald Erb
- Kathy Lu
- Mengying Liu
Organizations
- Office of Naval Research
- United States Army
- Virginia Tech