Recent progress in 2D group-VA semiconductors: from theory to experiment

Abstract

This review provides recent theoretical and experimental progress in the fundamental properties, electronic modulations, fabrications and applications of 2D group-VA materials.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2018
Source ID
10.1039/c7cs00125h

Entities

People

  • Félix Zamora
  • Haibo Zeng
  • Hongjun Gao
  • Julio Gómez-herrero
  • Pablo Ares
  • Shengli Zhang
  • Shiying Guo
  • Yeliang Wang
  • Zhen Zhu
  • Zhongfang Chen

Organizations

  • Autonomous University of Madrid
  • Chinese Academy of Sciences
  • Ministry of Industry and Information Technology of the People's Republic of China
  • Nanjing University of Science and Technology
  • National Natural Science Foundation of China
  • Natural Science Foundation of Jiangsu Province
  • Research Grants Council, University Grants Committee
  • United States Army
  • United States Department of Defense
  • University of California
  • University of Chinese Academy of Sciences
  • University of Puerto Rico
  • Yusuf Hamied Department of Chemistry

Tags

Technology Areas

  • Microelectronics