Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2017
Source ID
10.1039/c7nr00088j

Entities

People

  • Ahmad Zubair
  • Amirhasan Nourbakhsh
  • Mildred Dresselhaus
  • Sameer Joglekar
  • Tomás Palacios

Organizations

  • Army Research Office
  • National Science Foundation
  • Office of Naval Research