Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films

Abstract

Adsorption-controlled growth and strong charge compensation accompanied by decreased electron mobility due to cation non-stoichiometry was discovered in epitaxial BaSnO3 films using a hybrid MBE approach.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2017
Source ID
10.1039/c7tc00190h

Entities

People

  • Abhinav Prakash
  • Bharat Jalan
  • Greg Haugstad
  • Peng Xu
  • Xiaojia Wang
  • Xuewang Wu

Organizations

  • Air Force Office of Scientific Research
  • Division of Materials Research
  • United States Army
  • University of Minnesota

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Phased Array Antenna Design.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene