Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping
Abstract
Self-assembly of InAs nanowire arrays with highest reported aspect ratios and number density by van der Waals epitaxy on graphene is presented.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1039/c8ce01666f
Entities
People
- Hyun S Kum
- Michael A. Slocum
- Mohadeseh A. Baboli
- Parsian K Mohseni
- Seth M Hubbard
- Stephen Polly
- Thomas S Wilhelm
Organizations
- Intelligence Community Postdoctoral Research Fellowship Program
- National Science Foundation
- Rochester Institute of Technology
- United States Army