Carrier dynamics and spin–valley–layer effects in bilayer transition metal dichalcogenides

Abstract

We describe the complex interplay of spin, layer and valley indexing involved in two different stacking orientations of bilayer TMDCs MoS2 and WSe2via an ab initio treatment of electron–electron and electron–phonon interactions.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2019
Source ID
10.1039/c8fd00159f

Entities

People

  • Chitraleema Chakraborty
  • Christopher J Ciccarino
  • Dirk R. Englund
  • Prineha Narang

Organizations

  • Army Research Office
  • Harvard School of Engineering and Applied Sciences
  • Harvard University
  • Massachusetts Institute of Technology
  • National Science Foundation
  • United States Army
  • University of Cambridge
  • Yusuf Hamied Department of Chemistry

Tags

Fields of Study

  • Physics

Readers

  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene